MJD243_11 Datasheet, PDF (1/8 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistor

MJD243 (NPN),
MJD253 (PNP)
Complementary Silicon
Plastic Power Transistor
DPAK−3 for Surface Mount Applications
Designed for low voltage, low−power, high−gain audio amplifier
applications.
Features
• Collector−Emitter Sustaining Voltage −
V_CEO(sus) = 100 Vdc (Min) @ I_C
= 10 mAdc
• High DC Current Gain −
h_FE = 40 (Min) @ I_C
= 200 mAdc
= 15 (Min) @ I_C = 1.0 Adc
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Straight Lead Version in Plastic Sleeves (“−1” Suffix)
• Low Collector−Emitter Saturation Voltage −
V_CE(sat) = 0.3 Vdc (Max) @ I_C
= 500 mAdc
= 0.6 Vdc (Max) @ I_C = 1.0 Adc
• High Current−Gain − Bandwidth Product −
f_T = 40 MHz (Min) @ I_C
= 100 mAdc
• Annular Construction for Low Leakage −
I_CBO = 100 nAdc @ Rated V_CB
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
• These are Pb−Free Packages
http://onsemi.com
4.0 A, 100 V, 12.5 W
POWER TRANSISTOR
4
Base 1
Collector ²
Emitter ³
DPAK−3
CASE 369D
STYLE 1
4
12
3
DPAK−3
CASE 369C
STYLE 1
MARKING DIAGRAMS
AYWW
J253G
AYWW
J2x3G
A = Assembly Location
Y = Year
WW = Work Week
x = 4 or 5
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
January, 2011 − Rev. 12
Publication Order Number:
MJD243/D