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MJD148_16 Datasheet, PDF (1/6 Pages) ON Semiconductor – NPN Silicon Power Transistor
MJD148
NPN Silicon Power
Transistor
DPAK for Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
• High Gain
• Low Saturation Voltage
• High Current Gain − Bandwidth Product
• Epoxy Meets UL 94 V−0 @ 0.125 in
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
Collector−Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Collector Current − Peak
Base Current
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
VCEO
VCB
VEB
IC
ICM
IB
PD
45
Vdc
45
Vdc
5.0
Vdc
4.0
Adc
7.0
Adc
50
mAdc
20
W
0.16
W/°C
Total Power Dissipation (Note 1)
PD
@ TA = 25°C
Derate above 25°C
1.75
0.014
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to +150
°C
ESD − Human Body Model
HBM
3B
V
ESD − Machine Model
MM
C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
www.onsemi.com
POWER TRANSISTOR
4.0 AMPERES
45 VOLTS, 20 WATTS
COLLECTOR
2, 4
1
BASE
3
EMITTER
4
12
3
DPAK
CASE 369C
STYLE 1
MARKING DIAGRAM
AYWW
J148G
A
Y
WW
J148
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
Device
MJD148T4G
NJVMJD148T4G
Package
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping†
2,500/Tape & Reel
2,500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
May, 2016 − Rev. 9
Publication Order Number:
MJD148/D