MJD148 Datasheet, PDF (1/6 Pages) Inchange Semiconductor Company Limited – isc Silicon NPN Power Transistor

MJD148
NPN Silicon Power
Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
• High Gain − 50 Min @ I_C = 2.0 A
• Low Saturation Voltage − 0.5 V @ I_C = 2.0 A
• High Current Gain − Bandwidth Product − f_T = 3.0 MHz Min @
I_C = 250 mAdc
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B; >8000 V
Machine Model, C; >400 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
Symbol Value Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current − Continuous}
Peak
V_CEO
45
Vdc
V_CB
45
Vdc
V_EB
5.0
Vdc
I_C
4.0
Adc
7.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25°C}
Derate above 25°C
I_B
50
mAdc
P_D
20
W
0.16
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation (Note 1)}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ @ T_A = 25°C
Derate above 25°C
P_D
1.75
W
0.014 W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
T_J, T_stg
−55 to
°C
+ 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Case}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Ambient}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{(Note 1)}
R_qJC
R_qJA
6.25
°C/W
71.4
°C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{and reliability may be affected.}
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{1. These ratings are applicable when surface mounted on the minimum pad}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{sizes recommended.}
http://onsemi.com
4.0 Amps
45 Volts
20 Watts
POWER TRANSISTOR
12
3
4
DPAK
CASE 369C
STYLE 1
MARKING
DIAGRAM
YWW
J148
J148
Y
WW
= Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping^†
MJD148T4
DPAK 2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
June, 2004 − Rev. 2
Publication Order Number:
MJD148/D