MJD122_16 Datasheet, PDF (1/8 Pages) ON Semiconductor – Complementary Darlington Power Transistor

MJD122, NJVMJD122
(NPN), MJD127,
NJVMJD127 (PNP)
Complementary Darlington
Power Transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching
applications.
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
• Surface Mount Replacements for 2N6040−2N6045 Series,
TIP120−TIP122 Series, and TIP125−TIP127 Series
• Monolithic Construction With Built−in Base−Emitter Shunt Resistors
• High DC Current Gain: h_FE = 2500 (Typ) @ I_C = 4.0 Adc
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings:
♦ Human Body Model, 3B > 8000 V
♦ Machine Model, C > 400 V
• NJV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
SILICON
POWER TRANSISTOR
8 AMPERES
100 VOLTS, 20 WATTS
DPAK
CASE 369C
STYLE 1
COLLECTOR 2, 4
BASE
1
EMITTER 3
MARKING DIAGRAM
AYWW
J12xG
A = Assembly Location
Y = Year
WW = Work Week
x = 2 or 7
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
1
September, 2016 − Rev. 15
Publication Order Number:
MJD122/D