MJB6488 Datasheet, PDF (1/6 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

MJB6488, MJB6491
Product Preview
Complementary Silicon
Plastic Power Transistors
. . . designed for use in general−purpose amplifier and switching
applications.
• DC Current Gain Specified to 15 A −
h_FE = 20 − 150 @ I_C = 5.0 Adc
= 5.0 (Min) @ I_C = 15 Adc
• Collector−Emitter Sustaining Voltage −
V_CEO(sus) = 80 Vdc (Min)
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model; 3B, >8000 V,
Machine Model; C, >400 V
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current − Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25°C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25°C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TA = 25°C}
Derate above 25°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Case}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Ambient}
Symbol
V_CEO
V_CB
V_EB
I_C
I_B
P_D
P_D
T_J, T_stg
Symbol
R_qJC
R_qJA
Value
80
90
5.0
15
5.0
75
0.6
1.8
0.014
– 65 to
+ 150
Max
1.67
70
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/°C
W
W/°C
°C
Unit
°C/W
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
15 A
COMPLEMENTARY SILICON
POWER TRANSISTORS
80 V, 75 W
MARKING
DIAGRAM
D²PAK
CASE 418B
STYLE 1
JB64xx
AYWW
xx
= 88 or 91
A
= Assembly Location
Y
= Year
WW = Work Week
ORDERING INFORMATION
Device
Package
Shipping^†
MJB6488
D²PAK
50 Units / Rail
MJB6488T4
MJB6491
MJB6491T4
D²PAK
D²PAK
D²PAK
800 / Tape & Reel
50 Units / Rail
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
1
July, 2004 − Rev. P0
Publication Order Number:
MJB6488/D