MJB45H11 Datasheet, PDF (1/6 Pages) ON Semiconductor – Complementary Power Transistors

MJB44H11 (NPN),
MJB45H11 (PNP)
Preferred Devices
Complementary
Power Transistors
D²PAK for Surface Mount
. . . for general purpose power amplification and switching such as
output or driver stages in applications such as switching regulators,
converters and power amplifiers.
• Low Collector−Emitter Saturation Voltage −
V_CE(sat) = 1.0 V (Max) @ 8.0 A
• Fast Switching Speeds
• Complementary Pairs Simplifies Designs
• Epoxy Meets UL 94, V−O @ 0.125 in
• ESD Ratings: Human Body Model, 3B > 8000 V
Machine Model, C > 400 V
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
− Peak
Total Power Dissipation
@ T_C = 25°C
Derate above 25°C
Total Power Dissipation
@ T_A = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Symbol
V_CEO
V_EB
I_C
P_D
P_D
T_J, T_stg
Symbol
R_θJC
R_θJA
Value
80
5
10
20
50
1.67
2.0
0.016
−55 to
150
Max
2.5
75
Unit
Vdc
Vdc
Adc
Watts
W/°C
Watts
W/°C
°C
Unit
°C/W
°C/W
http://onsemi.com
SILICON POWER
TRANSISTORS
10 AMPERES
80 VOLTS
50 WATTS
MARKING DIAGRAM
D²PAK
CASE 418B
STYLE 1
B4xH11
YWW
Y
WW
B4xH11
x
= Year
= Work Week
= Specific Device Code
= 4 or 5
ORDERING INFORMATION
Device
Package
Shipping^†
MJB44H11
D²PAK
50 Units/Rail
MJB44H11T4
D²PAK 800/Tape & Reel
MJB45H11
D²PAK
50 Units/Rail
MJB45H11T4
D²PAK 800/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2003
1
December, 2003 − Rev. 1
Publication Order Number:
MJB44H11/D