MJB41C_05 Datasheet, PDF (1/6 Pages) ON Semiconductor – Complementary Silicon Plastic Power Transistors

MJB41C (NPN),
MJB42C (PNP)
Preferred Devices
Complementary Silicon
Plastic Power Transistors
D²PAK for Surface Mount
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
(No Suffix)
• Electrically the Same as TIP41 and T1P42 Series
• Pb−Free Packages are Available
MAXIMUM RATINGS
Rating
Symbol Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current − Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{− Peak}
V_CEO
100
Vdc
V_CB
100
Vdc
V_EB
5.0
Vdc
I_C
6.0
Adc
10
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation}
@ T_C = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Derate above 25_C}
I_B
2.0
Adc
P_D
65
W
0.52
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{@ TA = 25_C}
Derate above 25_C
P_D
2.0
W
0.016
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Unclamped Inductive Load Energy (Note 1)}
E
62.5
mJ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
T_J, T_stg −65 to +150 _C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Case}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance,}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Junction−to−Ambient
R_qJC
R_qJA
1.92
_C/W
62.5
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance,
Junction−to−Ambient (Note 2)
R_qJA
50
_C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum Lead Temperature for Soldering}
T_L
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Purposes, 1/8″ from Case for 10 Seconds}
260
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum ratings are those values beyond which device damage can occur.}
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. I_C = 2.5 A, L = 20 mH, P.R.F. = 10 Hz, V_CC = 10 V, R_BE = 100 W
2. When surface mounted to an FR−4 board using the minimum recommended
pad size.
© Semiconductor Components Industries, LLC, 2005
1
December, 2005 − Rev. 1
http://onsemi.com
COMPLEMENTARY SILICON
POWER TRANSISTORS
6 AMPERES,
100 VOLTS, 65 WATTS
MARKING
DIAGRAM
D²PAK
CASE 418B
STYLE 1
J4xCG
AYWW
J4xC
A
Y
WW
G
= Specific Device Code
x = 1 or 2
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
MJB41C
MJB41CG
MJB41CT4
MJB41CT4G
MJB42C
MJB42CG
Package
D²PAK
D²PAK
(Pb−Free)
D²PAK
D²PAK
(Pb−Free)
D²PAK
D²PAK
(Pb−Free)
Shipping^†
50 Units/Rail
50 Units/Rail
800/Tape & Reel
800/Tape & Reel
50 Units/Rail
50 Units/Rail
MJB42CT4
MJB42CT4G
D²PAK
D²PAK
(Pb−Free)
800/Tape & Reel
800/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJB41C/D