MJ4502 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(30A,100V,200W)

MJ4502
High-Power PNP Silicon
Transistor
This transistor is for use as an output device in complementary audio
amplifiers to 100−Watts music power per channel.
Features
• High DC Current Gain − h_FE = 25−100 @ I_C = 7.5 A
• Excellent Safe Operating Area
• Complement to the NPN MJ802
• Pb−Free Package is Available*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation @ T_C = 25_C
Derate above 25_C
Symbol
V_CER
V_CB
V_CEO
V_EB
I_C
I_B
P_D
Value
100
100
90
4.0
30
7.5
200
1.14
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W/_C
Operating and Storage Junction
Temperature Range
T_J, T_stg −65 to +200 _C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
q_JC
0.875
_C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
30 AMPERE
POWER TRANSISTOR
PNP SILICON
100 VOLTS − 200 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ4502G
AYYWW
MEX
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
MJ4502 = Device Code
G
= Pb−Free Package
A
= Assembly Location
YY = Year
WW = Work Week
MEX = Country of Origin
ORDERING INFORMATION
Device
Package
Shipping
MJ4502
TO−204
100 Units / Tray
MJ4502G
TO−204
(Pb−Free)
100 Units / Tray
© Semiconductor Components Industries, LLC, 2009
1
October, 2009 − Rev. 12
Publication Order Number:
MJ4502/D