MJ2501 Datasheet, PDF (1/4 Pages) ON Semiconductor – DARLINGTON POWER TRANSISTOR COMPLEMENTARY SILICON

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Medium-Power Complementary
Silicon Transistors
. . . for use as output devices in complementary general purpose amplifier applica-
tions.
• High DC Current Gain — hFE = 4000 (Typ) @ IC = 5.0 Adc
• Monolithic Construction with Built–in Base–Emitter Shunt Resistors
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{@ TC = 25_C}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
Temperature Range
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ THERMAL CHARACTERISTICS
Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
Symbol
θ_JC
Max
80
80
5.0
10
0.2
150
0.857
– 55 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Max
Unit
1.17
_C/W
Order this document
by MJ2501/D
PNP
MJ2501
NPN
MJ3001
Motorola Preferred Devices
10 AMPERE
DARLINGTON
POWER TRANSISTOR
COMPLEMENTARY
SILICON
80 VOLTS
150 WATTS
CASE 1–07
TO–204AA
(TO–3)
PNP
MJ2501
COLLECTOR
NPN
MJ3001
COLLECTOR
BASE
[ [ 2.0 k
50
BASE
[ [ 2.0 k
50
EMITTER
Figure 1. Darlington Circuit Schematic
EMITTER
Preferred devices are Motorola recommended choices for future use and best overall value.
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la98_{r Power Transistor Device Data}
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