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MJ21195 Datasheet, PDF (1/6 Pages) ON Semiconductor – COMPLEMENTARY SILICON POWER TRANSISTORS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Silicon Power Transistors
The MJ21195 and MJ21196 utilize Perforated Emitter technology and are
specifically designed for high power audio output, disk head positioners and linear
applications.
⢠Total Harmonic Distortion Characterized
⢠High DC Current Gain â hFE = 25 Min @ IC = 8 Adc
⢠Excellent Gain Linearity
⢠High SOA: 3 A, 80 V, 1 Second
Order this document
by MJ21195/D
MJ2PN1P195*
MJ2NP1N196*
*Motorola Preferred Device
16 AMPERE
COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS
250 WATTS
MAXIMUM RATINGS
Rating
CollectorâEmitter Voltage
CollectorâBase Voltage
EmitterâBase Voltage
CollectorâEmitter Voltage â 1.5 V
Collector Current â Continuous
Collector Current â Peak (1)
Base Current â Continuous
Total Power Dissipation @ TC = 25°C
Derate Above 25°C
Operating and Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ELECTRICAL CHARACTERISTICS (TC = 25°C ± 5°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
CollectorâEmitter Sustaining Voltage
(IC = 100 mAdc, IB = 0)
Collector Cutoff Current
(VCE = 200 Vdc, IB = 0)
(1) Pulse Test: Pulse Width = 5 µs, Duty Cycle ⤠10%.
VCEO(sus)
250
ICEO
â
CASE 1â07
TOâ204AA
(TOâ3)
Symbol
VCEO
VCBO
VEBO
VCEX
IC
IB
PD
TJ, Tstg
Value
250
400
5
400
16
30
5
250
1.43
âÄÄ65 to +200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/°C
°C
Symbol
Max
RθJC
0.7
Unit
°C/W
Typical
â
â
Max
Unit
â
Vdc
100
µAdc
(continued)
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
©MMoototorroollaa, IBncip. 1o9la98r Power Transistor Device Data
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