MJ15001_05 Datasheet, PDF (1/4 Pages) ON Semiconductor – Complementary Silicon Power Transistors

MJ15001 (NPN),
MJ15002 (PNP)
Complementary Silicon
Power Transistors
The MJ15001 and MJ15002 are EpiBaset power transistors
designed for high power audio, disk head positioners and other linear
applications.
Features
• High Safe Operating Area (100% Tested) − 5.0 A @ 40 V
0.5 A @ 100 V
• For Low Distortion Complementary Designs
• High DC Current Gain − h_FE = 25 (Min) @ I_C = 4 Adc
• Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter−Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current − Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current − Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter Current − Continuous}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Power Dissipation @ TC = 25°C}
Derate above 25°C
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
I_E
P_D
Value
140
140
5
15
5
20
200
1.14
Unit
Vdc
Vdc
Vdc
Adc
Adc
Adc
W
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
T_J, T_stg –65 to +200 °C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction−to−Case}
R_qJC
0.875 °C/W
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Maximum Lead Temperature for Soldering TL
Purposes 1/16″ from Case for v 10 secs
265
°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum ratings are those values beyond which device damage can occur.}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum ratings applied to the device are individual stress limit values (not}
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
December, 2005 − Rev. 4
http://onsemi.com
20 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
140 VOLTS, 250 WATTS
TO−204AA (TO−3)
CASE 1−07
STYLE 1
MARKING DIAGRAM
MJ1500xG
AYYWW
MEX
MJ1500x = Device Code
x = 1 or 2
G
= Pb−Free Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
ORDERING INFORMATION
Device
MJ15001
MJ15001G
MJ15002
MJ15002G
Package
TO−204AA
TO−204AA
(Pb−Free)
TO−204AA
TO−204AA
(Pb−Free)
Shipping
100 Units/Tray
100 Units/Tray
100 Units/Tray
100 Units/Tray
Publication Order Number:
MJ15001/D