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MJ14002 Datasheet, PDF (1/6 Pages) ON Semiconductor – COMPLEMENTARY SILICON POWER TRANSITORS | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ14001/D
High-Current Complementary
Silicon Power Transistors
. . . designed for use in highâpower amplifier and switching circuit applications,
⢠High Current Capability â IC Continuous = 60 Amperes
⢠DC Current Gain â hFE = 15 â 100 @ IC = 50 Adc
⢠Low CollectorâEmitter Saturation Voltage â
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ VCE(sat) = 2.5 Vdc (Max) @ IC = 50 Adc
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ MAXIMUM RATINGS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Rating
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ CollectorâEmitter Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Base Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ EmitterâBase Voltage
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Collector Current â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Base Current â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Emitter Current â Continuous
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Total Power Dissipation @ TC = 25_C
Derate above 25_C
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Operating and Storage Junction
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Temperature Range
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ THERMAL CHARACTERISTICS
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Characteristic
ÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃÃ Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
IC
IB
IE
PD
TJ, Tstg
MJ14002
MJ14001 MJ14003
60
80
60
80
5
60
15
75
300
17
â 65 to + 200
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Symbol
RθJC
Max
0.584
Unit
_C/W
NPN
MJ14002*
PNP
MJ14001
MJ14003*
*Motorola Preferred Device
60 AMPERES
COMPLEMENTARY
SILICON
POWER TRANSITORS
60 â 80 VOLTS
300 WATTS
CASE 197Aâ05
TOâ204AE (TOâ3)
360
330
270
210
150
90
30
0
0
40
80
120
160
200
240
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
©MMoototorroollaa, IBncip. 1o9la95r Power Transistor Device Data
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