MJ11028_08 Datasheet, PDF (1/4 Pages) ON Semiconductor – High-Current Complementary Silicon Power Transistors

MJ11028, MJ11030,
MJ11032 (NPN)
MJ11029, MJ11033 (PNP)
High-Current
Complementary Silicon
Power Transistors
High−Current Complementary Silicon Power Transistors are for use
as output devices in complementary general purpose amplifier
applications.
Features
• High DC Current Gain − h_FE = 1000 (Min) @ I_C = 25 Adc
h_FE = 400 (Min) @ I_C = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated I_C
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Junction Temperature to + 200_C
• Pb−Free Packages are Available*
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
MJ11028/29
MJ11030
MJ11032/33
V_CEO
60
Vdc
90
120
Collector−Base Voltage
MJ11028/29
MJ11030
MJ11032/33
V_CBO
60
Vdc
90
120
Emitter−Base Voltage
Collector Current − Continuous
− Peak (Note 1)
V_EBO
I_C
5.0
Vdc
50
Adc
100
Base Current − Continuous
Total Power Dissipation @ T_C = 25°C
Derate Above 25°C @ T_C = 100_C
Operating and Storage Junction
Temperature Range
I_B
P_D
T_J, T_stg
2.0
Adc
300
W
1.71
W/°C
−  55 to +200 °C
THERMAL CHARACTERISTICS
Characteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum Lead Temperature for}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Soldering Purposes for v 10 seconds
Symbol
Max
Unit
T_L
275
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Case
R_qJC
0.58
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
1
September, 2008 − Rev. 6
http://onsemi.com
50 AMPERE
COMPLEMENTARY
DARLINGTON POWER
TRANSISTORS
60 − 120 VOLTS
300 WATTS
NPN
COLLECTOR
CASE
BASE
1
PNP
COLLECTOR
CASE
BASE
1
EMITTER 2
MJ11028
MJ11030
MJ11032
EMITTER 2
MJ11029
MJ11033
MARKING
DIAGRAM
1
2
TO−204 (TO−3)
CASE 197A
STYLE 1
MJ110xxG
AYYWW
MEX
MJ110xx = Device Code
xx = 28, 29, 30, 32, 33
G
= Pb−Free Package
A
= Location Code
YY
= Year
WW
= Work Week
MEX
= Country of Orgin
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Publication Order Number:
MJ11028/D