MJ11017 Datasheet, PDF (1/6 Pages) Mospec Semiconductor – POWER TRANSISTORS(15A,150-250V,175W)

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MJ11017/D
Complementary Darlington
Silicon Power Transistors
. . . designed for use as general purpose amplifiers, low frequency switching and
motor control applications.
• High dc Current Gain @ 10 Adc — hFE = 400 Min (All Types)
• Collector–Emitter Sustaining Voltage
VCEO(sus) = 150 Vdc (Min) – MJ11018, 17
VCEO(sus) = 250 Vdc (Min) – MJ11022, 21
• Low Collector–Emitter Saturation
VCE(sat) = 1.0 V (Typ) @ IC = 5.0 A
VCE(sat) = 1.8 V (Typ) @ IC = 10 A
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ • Monolithic Construction
• 100% SOA Tested @ VCE = 44 V, IC = 4.0 A, t = 250 ms.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current —}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Continuous Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Total Device Dissipation @ TC = 25_C}
Derate Above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating and Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
Symbol
VCEO
VCB
VEB
IC
IB
PD
TJ, Tstg
MJ11018 MJ11022
MJ11017 MJ11021
150
250
150
250
50
15
30
0.5
175
1.16
– 65 to + 175
– 65 to + 200
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{v ThermalResistance, Junction to Case}
R_θJC
(1) Pulse Test: Pulse Width 5.0 ms, Duty Cycle 10%.
0.86
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
PNP
MJ11017
MJ11021*
MJ1^NP1^N018*
MJ11022
*Motorola Preferred Device
30 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60 – 120 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
200
150
100
50
0
0 25 50 75 100 125 150 175 200
TC, CASE TEMPERATURE (°C)
Figure 1. Power Derating
Preferred devices are Motorola recommended choices for future use and best overall value.
©_MM_oo_toto_rr_oo_lla_a, I_Bnc_ip. 1_o9_la95_{r Power Transistor Device Data}
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