MJ11012_01 Datasheet, PDF (1/4 Pages) ON Semiconductor – High-Current Complementary Silicon Transistors

ON Semiconductort
High-Current Complementary
Silicon Transistors
PNP
MJ11015
NPN
MJ11012
. . . for use as output devices in complementary general purpose
amplifier applications.
MJ11016 ^*
• High DC Current Gain —
h_FE = 1000 (Min) @ I_C – 20 Adc
• Monolithic Construction with Built–in Base Emitter Shunt
*ON Semiconductor Preferred Device
Resistor
• Junction Temperature to +200_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{MAXIMUM RATINGS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _Rating
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Emitter Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Emitter–Base Voltage}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Collector Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Base Current}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Total Device Dissipation @TC = 25_C}
Derate above 25_C @ T_C = 100_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Operating Storage Junction}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Temperature Range}
Symbol
V_CEO
V_CB
V_EB
I_C
I_B
P_D
T_J, T_stg
MJ11012
MJ11015
MJ11016
60
120
60
120
5
30
1
200
1.15
–55 to +200
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{THERMAL CHARACTERISTICS}
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Characteristic}
Symbol
Max
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Thermal Resistance, Junction to Case}
R_θJC
0.87
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ _{Maximum Lead Temperature for}
T_L
275
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ^{Soldering Purposes for v 10 Seconds.}
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/_C
_C
Unit
_C/W
_C
30 AMPERE
DARLINGTON
POWER TRANSISTORS
COMPLEMENTARY
SILICON
60–120 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
PNP
MJ11015
COLLECTOR
NPN
MJ11012
MJ11016
COLLECTOR
BASE
BASE
≈ 8.0 k ≈ 40
≈ 8.0 k ≈ 40
EMITTER
Figure 1. Darlington Circuit Schematic
EMITTER
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
© Semiconductor Components Industries, LLC, 2001
1
May, 2001 – Rev. 4
Publication Order Number:
MJ11012/D