MGW21N60ED Datasheet, PDF (1/6 Pages) Motorola, Inc – Insulated Gate Bipolar Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™ Designer's Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is co–packaged
with a soft recovery ultra–fast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. Its new 600V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. Co–packaged IGBTs save space, reduce assembly
time and cost. This new E–series introduces an energy efficient,
ESD protected, and rugged short circuit device.
• Industry Standard TO–247 Package
C
• High Speed: Eoff = 65 mJ/A typical at 125°C
• High Voltage Short Circuit Capability – 10 ms minimum at
125°C, 400 V
• Low On–Voltage — 2.1 V typical at 20 A, 125°C
G
• Soft Recovery Free Wheeling Diode is included in the Package
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes
E
Order this document
by MGW21N60ED/D
MGW21N60ED
IGBT IN TO–247
21 A @ 90°C
31 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
ON–VOLTAGE
G
C
E
CASE 340K–01
STYLE 4
TO–247 AE
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600
Vdc
600
Vdc
± 20
Vdc
31
Adc
21
42
Apk
142
Watts
1.14
W/°C
Operating and Storage Junction Temperature Range
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 Ω)
TJ, Tstg
– 55 to 150
°C
tsc
10
ms
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Diode
Thermal Resistance — Junction to Ambient
R_θJC
R_θJC
R_θJA
0.88
°C/W
1.4
45
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
TL
260
°C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
© ^MMo^oto^toro^rl^oa,^laInc^IG. 1^B99^T7 ^{Device Data}
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