MGSF3455XT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MGSF3455XT1
Preliminary Information
Low R_DS(on) Small-Signal
MOSFETs Single P-Channel
Field Effect Transistors
These miniature surface mount MOSFETs utilize the High
Cell Density, HDTMOS process. Low r_DS(on) assures
minimal power loss and conserves energy, making this
device ideal for use in small power management circuitry.
Typical applications are dc−dc converters, power
management in portable and battery−powered products such
as computers, printers, PCMCIA cards, cellular and cordless
telephones.
• Low r_DS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature TSOP 6 Surface Mount Package Saves Board Space
http://onsemi.com
P−CHANNEL
ENHANCEMENT−MODE
MOSFET
R_DS(on) = 80 mW (TYP)
DD _S
DD
G
CASE 318G−02, Style 1
TSOP 6 PLASTIC
1256
DRAIN
3
GATE
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
SOURCE
4
Symbol
Value
Unit
Drain−to−Source Voltage
V_DSS
30
Vdc
Gate−to−Source Voltage — Continuous
V_GS
± 20
Vdc
Drain Current — Continuous @ T_A = 255C
Drain Current — Pulsed Drain Current (t_p 3 10 ms)
Total Power Dissipation @ T_A = 255C
Operating and Storage Temperature Range
I_D
1.45
A
I_DM
10
P_D
400
mW
T_J, T_stg − 55 to 150
°C
Thermal Resistance — Junction−to−Ambient
R_θJA
300
°C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
T_L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Device
MGSF3455XT1
MGSF3455XT3
ORDERING INFORMATION
Reel Size
Tape Width
7″
8 mm embossed tape
13″
8 mm embossed tape
Quantity
3000
10,000
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 − Rev. 2
Publication Order Number:
MGSF3455XT1/D