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MGSF3454XT1 Datasheet, PDF (1/6 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET
MGSF3454XT1
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Low RDS(on) Small-Signal
MOSFETs Single N-Channel
Field Effect Transistors
These miniature surface mount MOSFETs utilize the High Cell
Density, HDTMOS® process. Low RDS(on) assures minimal power
loss and conserves energy, making this device ideal for use in small
power management circuitry. Typical applications are dc−dc
converters, power management in portable and battery−powered
products such as computers, printers, PCMCIA cards, cellular and
cordless telephones.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature TSOP−6 Surface Mount Package Saves Board Space
http://onsemi.com
N−CHANNEL
ENHANCEMENT−MODE
MOSFET
RDS(on) = 50 mW (TYP)
DD S
DD
G
CASE 318G−02, Style 1
TSOP 6 PLASTIC
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ TA = 25°C
Drain Current − Pulsed Drain Current (tp ≤ 10 ms)
VDSS
30
Vdc
VGS
± 20
Vdc
ID
1.75
A
IDM
20
Total Power Dissipation @ TA = 25°C
PD
950
mW
Operating and Storage Temperature Range
TJ, Tstg −55 to 150
°C
Thermal Resistance − Junction−to−Ambient
RqJA
250
°C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
Device Marking = 3G
Device
MGSF3454XT1
MGSF3454XT3
ORDERING INFORMATION
Reel Size
Tape Width
7″
8 mm embossed tape
13″
8 mm embossed tape
Quantity
3000
10,000
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2013
1
May, 2013 − Rev. 1
Publication Order Number:
MGSF3454XT1/D