MGSF3442VT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MGSF3442VT1
Preferred Device
Power MOSFET
4 Amps, 20 Volts
N−Channel TSOP−6
These miniature surface mount MOSFETs low R_DS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
dc−dc converters, power management in portable and
battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
• Low R_DS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature TSOP−6 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current
− Continuous @ T_A = 25°C
− Pulsed Drain Current (t_p ≤ 10 µs)
Total Power Dissipation @ T_A = 25°C
Mounted on FR4 t  5 sec
V_DSS
V_GS
I_D
I_DM
P_D
20
± 8.0
4.0
20
2.0
Operating and Storage Temperature
Range
T_J, T_stg − 55 to
150
Thermal Resistance − Junction−to−Ambient R_θJA
62.5
Maximum Lead Temperature for Soldering
T_L
260
Purposes, for 10 seconds
Unit
Vdc
Vdc
A
W
°C
°C/W
°C
http://onsemi.com
4 AMPERES
20 VOLTS
R_DS(on) = 70 mΩ
N−Channel
1256
3
4
MARKING
DIAGRAM
3
2
1 _TSOP−6
442
CASE 318G
W
4
5
6
STYLE 1
442 = Device Code
W
= Work Week
PIN ASSIGNMENT
Drain Drain Source
6 54
© Semiconductor Components Industries, LLC, 2000
September, 2004 − Rev. XXX
1 23
Drain Drain Gate
ORDERING INFORMATION
Device
Package
Shipping
MGSF3442VT1
TSOP−6 3000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MGSF3442VT1/D