MGSF2P02HD Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET 2 Amps, 20 Volts

MGSF2P02HD
Power MOSFET
2 Amps, 20 Volts
P−Channel TSOP−6
This device represents a series of Power MOSFETs which are
capable of withstanding high energy in the avalanche and
commutation modes and the drain−to−source diode has a very low
reverse recovery time. These devices are designed for use in low
voltage, high speed switching applications where power efficiency is
important. Typical applications are dc−dc converters, and power
management in portable and battery powered products such as
computers, printers, cellular and cordless phones. They can also be
used for low voltage motor controls in mass storage products such as
disk drives and tape drives. The avalanche energy is specified to
eliminate the guesswork in designs where inductive loads are switched
and offer additional safety margin against unexpected voltage
transients.
Features
• Miniature TSOP−6 Surface Mount Package − Saves Board Space
• Low Profile for Thin Applications such as PCMCIA Cards
• Very Low R_DS(on) Provides Higher Efficiency and Expands
Battery Life
• Logic Level Gate Drive − Can Be Driven by Logic ICs
• Diode is Characterized for Use in Bridge Circuits
• Diode Exhibits High Speed, with Soft Recovery
• I_DSS Specified at Elevated Temperatures
• Avalanche Energy Specified
• Package Mounting Information Provided
http://onsemi.com
V_DSS
20 V
R_DS(ON) TYP
175 mΩ
I_D MAX
2.0 A
P−Channel
1256
3
4
1
TSOP−6
CASE 318G
STYLE 1
MARKING
DIAGRAM
3V
W
3V
= Device Code
W
= Work Week
PIN ASSIGNMENT
Drain Drain Source
6 54
© Semiconductor Components Industries, LLC, 2004
April, 2004 − Rev. 2
1 23
Drain Drain Gate
ORDERING INFORMATION
Device
Package
Shipping^†
MGSF2P02HDT1 TSOP−6 3000 Tape & Reel
MGSF2P02HDT3 TSOP−6 10,000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Publication Order Number:
MGSF2P02HD/D