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MGSF1P02LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – P-CHANNEL ENHANCEMENT-MODE TMOS MOSFET | |||
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MGSF1P02LT1
Preferred Device
Power MOSFET
750 mAmps, 20 Volts
PâChannel SOTâ23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dcâdc converters and power management in portable
and batteryâpowered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
⢠Low RDS(on) Provides Higher Efficiency and Extends Battery Life
⢠Miniature SOTâ23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
DrainâtoâSource Voltage
GateâtoâSource Voltage â Continuous
Drain Current
â Continuous @ TA = 25°C
â Pulsed Drain Current (tp ⤠10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
VDSS
20
VGS
± 20
ID
IDM
PD
TJ, Tstg
750
2000
400
â 55 to
150
Thermal Resistance â JunctionâtoâAmbient RθJA
300
Maximum Lead Temperature for Soldering
TL
260
Purposes, 1/8â³ from case for 10
seconds
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
http://onsemi.com
750 mAMPS
20 VOLTS
RDS(on) = 350 mW
PâChannel
3
1
2
MARKING
DIAGRAM
3
SOTâ23
PC
CASE 318
W
1
STYLE 21
2
W
= Work Week
PIN ASSIGNMENT
Drain
3
© Semiconductor Components Industries, LLC, 2000
November, 2000 â Rev. 3
1
2
Gate
Source
ORDERING INFORMATION
Device
Package
Shipping
MGSF1P02LT1
MGSF1P02LT3
SOTâ23 3000 Tape & Reel
SOTâ23 10,000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MGSF1P02LT1/D
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