MGSF1N03LT1 Datasheet, PDF (1/4 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MGSF1N03LT1
Preferred Device
Power MOSFET
30 V, 2.1 A, Single N−Channel, SOT−23
These miniature surface mount MOSFETs low R_DS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc−dc converters and power management in portable
and battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
• Low R_DS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Pb−Free Package is Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
V_DSS
30
V
Gate−to−Source Voltage
V_GS
±20
V
Continuous Drain
Current (Note 1)
Steady T_A = 25°C
I_D
State
T_A = 85°C
2.1
A
1.5
t ≤ 10 s T_A = 25°C
2.8
Power Dissipation
(Note 1)
Steady T_A = 25°C P_D
State
0.73 W
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady T_A = 25°C
I_D
State
T_A = 85°C
T_A = 25°C
P_D
1.6
A
1.1
0.42 W
Pulsed Drain Current
ESD Capability (Note 3)
t_p = 10 ms
C = 100 pF,
RS = 1500 W
I_DM
6.0
A
ESD
125
V
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T_J,
−55 to °C
T_STG
150
I_S
2.1
A
T_L
260 °C
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction−to−Ambient − Steady State (Note 1)
R_qJA
170 °C/W
Junction−to−Ambient − t < 10 s (Note 1)
R_qJA
100
Junction−to−Ambient − Steady State (Note 2)
R_qJA
300
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq pad size.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
3. ESD Rating Information: HBM Class 0.
http://onsemi.com
V_(BR)DSS
30 V
R_DS(on) TYP
80 mW @ 10 V
125 mW @ 4.5 V
I_D MAX
2.1 A
N−Channel
D
G
S
3
1
2
SOT−23
CASE 318
STYLE 21
MARKING DIAGRAM/
PIN ASSIGNMENT
3
Drain
N3
1
Gate
2
Source
N3 = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping^†
MGSF1N03LT1 SOT−23 3000/Tape & Reel
MGSF1N03LT3 SOT−23 10000/Tape & Reel
MGSF1N03LT3G SOT−23 10000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
1
March, 2005 − Rev. 7
Publication Order Number:
MGSF1N03LT1/D