MGSF1N02LT1 Datasheet, PDF (1/8 Pages) Motorola, Inc – N-CHANNEL ENHANCEMENT-MODE TMOS MOSFET

MGSF1N02LT1
Preferred Device
Power MOSFET
750 mAmps, 20 Volts
N–Channel SOT–23
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in space sensitive power management circuitry. Typical
applications are dc–dc converters and power management in portable
and battery–powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT–23 Surface Mount Package Saves Board Space
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ TA = 25°C
– Pulsed Drain Current (tp ≤ 10 µs)
Total Power Dissipation @ TA = 25°C
Operating and Storage Temperature
Range
VDSS
20
VGS
± 20
ID
IDM
PD
TJ, Tstg
750
2000
400
– 55 to
150
Thermal Resistance – Junction–to–Ambient R_θJA
300
Maximum Lead Temperature for Soldering
TL
260
Purposes, 1/8″ from case for 10
seconds
Unit
Vdc
Vdc
mA
mW
°C
°C/W
°C
http://onsemi.com
750 mAMPS
20 VOLTS
RDS(on) = 90 mW
N–Channel
3
1
2
MARKING
DIAGRAM
3
SOT–23
N2
CASE 318
W
1
STYLE 21
2
W
= Work Week
PIN ASSIGNMENT
Drain
3
© Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 3
1
2
Gate
Source
ORDERING INFORMATION
Device
Package
Shipping
MGSF1N02LT1
MGSF1N02LT3
SOT–23
SOT–23
3000 Tape & Reel
10,000 Tape & Reel
Preferred devices are recommended choices for future use
and best overall value.
1
Publication Order Number:
MGSF1N02LT1/D