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MGP4N60ED Datasheet, PDF (1/6 Pages) ON Semiconductor – Insulated Gate Bipolar Transistor with Anti-Parallel Diode | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
⢠Designer's Data Sheet
Insulated Gate Bipolar Transistor
with Anti-Parallel Diode
NâChannel EnhancementâMode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) is coâpackaged
with a soft recovery ultraâfast rectifier and uses an advanced
termination scheme to provide an enhanced and reliable high
voltageâblocking capability. Its new 600 V IGBT technology is
specifically suited for applications requiring both a high tempera-
ture short circuit capability and a low VCE(on). It also provides fast
switching characteristics and results in efficient operation at high
frequencies. Coâpackaged IGBTs save space, reduce assembly
time and cost. This new Eâseries introduces an energy efficient,
ESD protected and short circuit rugged device.
⢠Industry Standard TOâ220 Package
C
⢠High Speed: Eoff = 60 mJ/A typical at 125°C
⢠High Voltage Short Circuit Capability â 10 ms minimum at 125°C, 400 V
⢠Low OnâVoltage 2.0 V typical at 3.0 A, 125°C
⢠Soft Recovery Free Wheeling Diode
is Included in the Package
⢠Robust High Voltage Termination
G
⢠ESD Protection GateâEmitter Zener Diodes
E
Order this document
by MGP4N60ED/D
MGP4N60ED
IGBT & DIODE IN TOâ220
4.0 A @ 90°C
6.0 A @ 25°C
600 VOLTS
SHORT CIRCUIT RATED
LOW ONâVOLTAGE
G
C
E
CASE 221Aâ09
STYLE 9
TOâ220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
CollectorâEmitter Voltage
CollectorâGate Voltage (RGE = 1.0 Mâ¦)
GateâEmitter Voltage â Continuous
Collector Current â Continuous @ TC = 25°C
â Continuous @ TC = 90°C
â Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600
Vdc
600
Vdc
± 20
Vdc
6.0
Adc
4.0
8.0
Apk
62.5
Watts
0.51
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
â 55 to 150
°C
Short Circuit Withstand Time
(VCC = 400 Vdc, VGE = 15 Vdc, TJ = 125°C, RG = 20 â¦)
tsc
10
ms
Thermal Resistance â Junction to Case â IGBT
â Junction to Case â Diode
â Junction to Ambient
RθJC
RθJC
RθJA
2.0
°C/W
3.6
65
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 5 seconds
TL
260
°C
Mounting Torque, 6â32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designerâs Data for âWorst Caseâ Conditions â The Designerâs Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves â representing boundaries on device characteristics â are given to facilitate âworst caseâ design.
Designerâs⢠is a trademark of Motorola, Inc.
REV 1
© MMoototororloa,laIncIG. 1B99T8 Device Data
1
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