MGP20N60U Datasheet, PDF (1/5 Pages) Motorola, Inc – Insulated Gate Bipolar Transistor

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
™ Designer's Data Sheet
Insulated Gate Bipolar Transistor
N–Channel Enhancement–Mode Silicon Gate
This Insulated Gate Bipolar Transistor (IGBT) uses an advanced
termination scheme to provide an enhanced and reliable high
voltage–blocking capability. It also provides low on–voltage which
results in efficient operation at high current.
• Industry Standard TO–220 Package
• High Speed Eoff: 63 mJ/A typical at 125°C
• Low On–Voltage – 1.7 V typical at 10 A, 125°C
• Robust High Voltage Termination
• ESD Protection Gate–Emitter Zener Diodes
C
Order this document
by MGP20N60U/D
MGP20N60U
IGBT IN TO–220
20 A @ 90°C
31 A @ 25°C
600 VOLTS
VERY LOW
ON–VOLTAGE
G
E
G
C
E
CASE 221A–09
STYLE 9
TO–220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
Collector–Gate Voltage (RGE = 1.0 MΩ)
Gate–Emitter Voltage — Continuous
Collector Current — Continuous @ TC = 25°C
Collector Current — Continuous @ TC = 90°C
Collector Current — Repetitive Pulsed Current (1)
Total Power Dissipation @ TC = 25°C
Derate above 25°C
VCES
VCGR
VGE
IC25
IC90
ICM
PD
600
Vdc
600
Vdc
± 20
Vdc
31
Adc
20
62
Apk
112
Watts
0.89
W/°C
Operating and Storage Junction Temperature Range
TJ, Tstg
– 55 to 150
°C
Thermal Resistance — Junction to Case – IGBT
Thermal Resistance — Junction to Ambient
R_θJC
R_θJA
1.12
°C/W
65
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
TL
260
°C
Mounting Torque, 6–32 or M3 screw
10 lbfSin (1.13 NSm)
(1) Pulse width is limited by maximum junction temperature. Repetitive rating.
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Designer’s is a trademark of Motorola, Inc.
REV 1
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