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MGP20N40CL Datasheet, PDF (1/5 Pages) Motorola, Inc – SMARTDISCRETES Internally Clamped, N-Channel IGBT | |||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Advanced Information
SMARTDISCRETESâ¢
Internally Clamped, N-Channel
IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features GateâEmitter ESD protection, GateâCollector overvoltage
protection from SMARTDISCRETES⢠monolithic circuitry for
usage as an Ignition Coil Driver.
⢠Temperature Compensated GateâCollector Clamp Limits
Stress Applied to Load
⢠Integrated ESD Diode Protection
⢠Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessors
⢠Low Saturation Voltage
⢠High Pulsed Current Capability
Order this document
by MGP20N40CL/D
MGP20N40CL
20 AMPERES
VOLTAGE CLAMPED
NâCHANNEL IGBT
VCE(on) = 1.8 VOLTS
400 VOLTS (CLAMPED)
C
G
Rge
G
C
E
CASE 221Aâ09
STYLE 9
E
TOâ220AB
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
CollectorâEmitter Voltage
CollectorâGate Voltage
GateâEmitter Voltage
Collector Current â Continuous @ TC = 25°C
t Reversed Collector Current â pulse width 100 ms
Total Power Dissipation @ TC = 25°C (TOâ220)
Electrostatic Voltage â GateâEmitter
VCES
VCGR
VGE
IC
ICR
PD
ESD
CLAMPED
CLAMPED
CLAMPED
20
12
150
3.5
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance â Junction to Case â (TOâ220)
â Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8â³ from case for 5 seconds
Mounting Torque, 6â32 or M3 screw
TJ, Tstg
â 55 to 175
RqJC
1.0
RqJA
62.5
TL
260
10 lbfin (1.13 Nm)
UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS
Single Pulse CollectorâEmitter Avalanche Energy
@ Starting TJ = 25°C
@ Starting TJ = 150°C
EAS
550
150
SMARTDISCRETES is a trademark of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
kV
°C
°C/W
°C
mJ
REV 1
© MMoototororloa,laIncT.M19O97S Power MOSFET Transistor Device Data
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