MGP15N40CL Datasheet, PDF (1/8 Pages) ON Semiconductor – Internally Clamped N-Channel IGBT

MGP15N40CL,
MGB15N40CL,
MGC15N40CL
Internally Clamped
N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over–Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
• Gate–Emitter ESD Protection
• Temperature Compensated Gate–Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (RG)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Collector–Emitter Voltage
Collector–Gate Voltage
Gate–Emitter Voltage
Collector Current–Continuous
@ TC = 25°C
VCES
440
VCER
440
VGE
22
IC
15
Total Power Dissipation
@ TC = 25°C
Derate above 25°C
PD
136
1.0
Operating and Storage Temperature
Range
TJ, Tstg
–55 to
175
Unit
VDC
VDC
VDC
ADC
Watts
W/°C
°C
http://onsemi.com
N–CHANNEL IGBT
15 A, 410 V
VCE(on) = 1.8 V MAX
C
G
RG
RGE
E
MARKING
DIAGRAMS
G
CE
TO–220
CASE 221A
STYLE 9
GP15N40CL
ALYYWW
D2PAK
CASE 418B
STYLE 3
GB15N40CL
ALYYWW
© Semiconductor Components Industries, LLC, 2000
April, 2000 – Rev. 1
A
= Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
ORDERING INFORMATION
Device
Package
Shipping
MGP15N40CL
TO–220
50 Units/Rail
MGB15N40CLT4 D2PAK 800 Tape & Reel
MGC15N40CL Die Options Not Applicable
1
Publication Order Number:
MGP15N40CL/D