MGP15N38CL Datasheet, PDF (1/4 Pages) ON Semiconductor – Internally Clamped N-Channel IGBT

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SEMICONDUCTOR TECHNICAL DATA
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Internally Clamped N-Channel IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features Gate–Emitter ESD protection, Gate Collector Over–
Voltage Protection from monolithic circuitry for usage as an Ignition
Coil Driver.
• Temperature Compensated Gate – Collector Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
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by MGP15N38CL/D
MGP15N38CL
15 AMPERES
N–CHANNEL IGBT
VCE(on) = 1.8 V
380 VOLTS
CLAMPED
C
G
G
C
E
CASE 221A–09
STYLE 9
TO–220AB
E
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Gate Voltage
Gate–Emitter Voltage
Collector Current — Continuous
Total Power Dissipation
Derate above 25°C
VCES
VCER
VGE
IC
PD
CLAMPED
CLAMPED
CLAMPED
15
136
0.91
Operating and Storage Temperature Range
UNCLAMPED COLLECTOR–TO–EMITTER AVALANCHE CHARACTERISTICS (TJ < 150°C)
Single Pulse Collector–to–Emitter Avalanche Energy
VCC = 50 V, VGE = 5.0 V, PEAK IL = 14.2 A, L = 3.0 mH, Starting TJ = 25°C
VCC = 50 V, VGE = 5.0 V, PEAK IL = 10 A, L = 3.0 mH, Starting TJ = 150°C
TJ, Tstg
EAS
– 55 to 175
300
150
THERMAL CHARACTERISTICS
Thermal Resistance — Junction–to–Case
Thermal Resistance — Junction–to–Ambient
R_θJC
R_θJA
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 5 seconds
TL
This document contains information on a new product. Specifications and information herein are subject to change without notice.
1.1
62.5
260
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
mJ
°C/W
°C
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