MCR716_05 Datasheet, PDF (1/5 Pages) ON Semiconductor – Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

MCR716, MCR718
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control, process control, temperature, light
and speed control.
Features
• Small Size
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Surface Mount Lead Form − Case 369C
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
• Pb−Free Packages are Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage
V_DRM,
V
(Note 1) (T_J = −40 to 110°C, Sine Wave,
V_RRM
50 to 60 Hz, Gate Open)
MCR716
400
MCR718
600
On−State RMS Current
I_T(RMS)
4.0
A
(180° Conduction Angles; T_C = 90°C)
Average On−State Current
I_T(AV)
2.6
A
(180° Conduction Angles; T_C = 90°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T_J = 110°C)
Circuit Fusing Consideration (t = 8.3 msec)
I_TSM
I²t
25
A
2.6
A²sec
Forward Peak Gate Power
(Pulse Width ≤ 1.0 msec, T_C = 90°C)
P_GM
0.5
W
Forward Average Gate Power
(t = 8.3 msec, T_C = 90°C)
P_G(AV)
0.1
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 msec, T_C = 90°C)
I_GM
0.2
A
Operating Junction Temperature Range
T_J
−40 to +110 °C
Storage Temperature Range
T_stg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2005
1
November, 2005 − Rev. 5
http://onsemi.com
SCRs
4.0 AMPERES RMS
400 − 600 VOLTS
G
A
K
4
12
3
DPAK
CASE 369C
STYLE 4
MARKING DIAGRAM
YWW
MCR
71xG
Y
WW
MCR71x
G
= Year
= Work Week
= Device Code
x= M or N
= Pb−Free Package
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR716/D