MCR703A Datasheet, PDF (1/6 Pages) Motorola, Inc – Silicon Controlled Rectifiers

MCR703A Series
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume, low cost consumer
applications such as temperature, light and speed control; process and
remote control; and warning systems where reliability of operation is
critical.
Features
• Small Size
• Passivated Die Surface for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Recommend Electrical Replacement for C106
• Surface Mount Package − Case 369C
• To Obtain “DPAK” in Straight Lead Version (Shipped in Sleeves):
Add ’1’ Suffix to Device Number, i.e., MCR706A1
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
• Pb−Free Packages are Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol
Max
Unit
http://onsemi.com
SCRs
4.0 AMPERES RMS
100 − 600 VOLTS
G
A
K
12
3
4
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAMS
YWW
CR
70xAG
Peak Repetitive Off−State Voltage (Note 1)
V_DRM,
V
(T_C = −40 to +110°C, Sine Wave, 50 to 60 Hz, V_RRM
Gate Open)
MCR703A
100
MCR706A
400
MCR708A
600
Peak Non-Repetitive Off−State Voltage
V_RSM
V
(Sine Wave, 50 to 60 Hz, Gate Open,
T_C = −40 to +110°C)
MCR703A
150
MCR706A
450
MCR708A
650
On−State RMS Current
(180° Conduction Angles; T_C = 90°C)
Average On−State Current (180° Conduction
Angles)
T_C = −40 to +90°C
T_C = +100°C
Non-Repetitive Surge Current
(1/2 Sine Wave, 60 Hz, T_J = 110°C)
(1/2 Sine Wave, 1.5 ms, T_J = 110°C)
Circuit Fusing (t = 8.3 msec)
I_T(RMS)
I_T(AV)
I_TSM
I²t
4.0
A
A
2.6
1.6
A
25
35
2.6
A²sec
1
2
3
4
DPAK−3
CASE 369D
STYLE 2
YWW
CR
70xAG
Y = Year
WW = Work Week
70xA = Device Code
x = 3, 6 or 8
G = Pb−Free Package
PIN ASSIGNMENT
1
Gate
2
Anode
3
Cathode
Forward Peak Gate Power
P_GM
0.5
W
4
(Pulse Width ≤ 1.0 msec, T_C = 90°C)
Anode
Forward Average Gate Power
(t = 8.3 msec, T_C = 90°C)
P_G(AV)
0.1
W
Forward Peak Gate Current
I_GM
0.2
A
(Pulse Width ≤ 1.0 msec, T_C = 90°C)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Operating Junction Temperature Range
T_J −40 to +110 °C
Preferred devices are recommended choices for future use
Storage Temperature Range
T_stg −40 to +150 °C
and best overall value.
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate
voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2006
1
November, 2007 − Rev. 7
Publication Order Number:
MCR703A/D