MCR69_04 Datasheet, PDF (1/6 Pages) ON Semiconductor – Silicon Controlled Rectifiers Reverse Blocking Thyristors

MCR69−2, MCR69−3
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for overvoltage protection in crowbar circuits.
Features
• Glass-Passivated Junctions for Greater Parameter Stability and
Reliability
• Center-Gate Geometry for Uniform Current Spreading Enabling
High Discharge Current
• Small Rugged, Thermowatt Package Constructed for Low Thermal
Resistance and Maximum Power Dissipation and Durability
• High Capacitor Discharge Current, 750 Amps
• Pb−Free Packages are Available*
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Peak Repetitive Off−State Voltage (Note 1) V_DRM,
V
(T_J = *40 to +125°C, Gate Open)
V_RRM
MCR69−2
50
MCR69−3
100
Peak Discharge Current (Note 2)
I_TM
750
A
On-State RMS Current
I_T(RMS)
25
A
(180° Conduction Angles; T_C = 85°C)
Average On-State Current
I_T(AV)
16
A
(180° Conduction Angles; T_C = 85°C)
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave, 60 Hz, T_J = 125°C)
Circuit Fusing Considerations (t = 8.3 ms)
I_TSM
I²t
300
A
375
A²s
Forward Peak Gate Current
(t ≤ 1.0 ms, T_C = 85°C)
I_GM
2.0
A
Forward Peak Gate Power
(t ≤ 1.0 ms, T_C = 85°C)
P_GM
20
W
Forward Average Gate Power
(t = 8.3 ms, T_C = 85°C)
P_G(AV)
0.5
W
Operating Junction Temperature Range
T_J
−40 to +125 °C
Storage Temperature Range
T_stg −40 to +150 °C
Mounting Torque
−
8.0
in. lb.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Ratings apply for t_w = 1 ms. See Figure 1 for I_TM capability for various
duration of an exponentially decaying current waveform, t_w is defined as
5 time constants of an exponentially decaying current pulse.
3. Test Conditions: I_G = 150 mA, V_D = Rated V_DRM, I_TM = Rated Value, T_J = 125°C.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2004
1
December, 2004 − Rev. 1
http://onsemi.com
SCRs
25 AMPERES RMS
50 thru 100 VOLTS
G
A
K
MARKING
DIAGRAM
4
1
2
3
1
2
3
4
TO−220AB
CASE 221A
STYLE 3
AYWW
MCR69x
AKA
A
= Assembly Location
Y
= Year
WW = Work Week
MCR69 = Device Code
x
= 2 or 3
AKA = Location Code
PIN ASSIGNMENT
Cathode
Anode
Gate
Anode
ORDERING INFORMATION
Device
Package
Shipping^†
MCR69−2
TO220AB
500/Box
MCR69−2G
MCR69−3
TO220AB
(Pb−Free)
TO220AB
500/Box
500/Box
MCR69−3G
TO220AB
(Pb−Free)
500/Box
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MCR69/D