MCR22-6_06 Datasheet, PDF (1/7 Pages) ON Semiconductor – Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors

MCR22−6, MCR22−8
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed and tested for repetitive peak operation required for CD
ignition, fuel ignitors, flash circuits, motor controls and low-power
switching applications.
Features
• 150 A for 2 ms Safe Area
• High dv/dt
• Very Low Forward “On” Voltage at High Current
• Low-Cost TO-226 (TO-92)
• Pb−Free Packages are Available*
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1) V_DRM,
V
(R_GK = IK, T_J = *40 to +110°C, Sine Wave, V_RRM
50 to 60 Hz, Gate Open)
MCR22−6
400
MCR22−8
600
On-State Current RMS
(180° Conduction Angles, T_C = 80°C)
I_T(RMS)
1.5
A
Peak Non-repetitive Surge Current,
I_TSM
15
A
@T_A = 25°C, (1/2 Cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
I²t
0.9
A²s
Forward Peak Gate Power
(Pulse Width ≤ 1.0 msec, T_A = 25°C)
Forward Average Gate Power
(t = 8.3 msec, T_A = 25°C)
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, T_A = 25°C)
Reverse Peak Gate Voltage
(Pulse Width ≤ 1.0 ms, T_A = 25°C)
Operating Junction Temperature Range
@ Rated V_RRM and V_DRM
Storage Temperature Range
THERMAL CHARACTERISTICS
P_GM
0.5
W
P_G(AV)
0.1
W
I_FGM
0.2
A
V_RGM
5.0
V
T_J −40 to +110 °C
T_stg −40 to +150 °C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
R_qJC
50
°C/W
Thermal Resistance, Junction−to−Ambient R_qJA
160
°C/W
Lead Solder Temperature
T_L
(Lead Length q 1/16″ from case, 10 S Max)
+260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006
1
July, 2006 − Rev. 5
http://onsemi.com
SCRs
1.5 AMPERES RMS
400 thru 600 VOLTS
G
A
K
TO−92 (TO−226)
CASE 029
STYLE 10
1
MARKING DIAGRAMS
MCR
22−x
AYWW G
G
MCR22−x = Device Code
x = 6 or 8
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1
Cathode
2
Gate
3
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR22−6/D