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MCR12L Datasheet, PDF (1/5 Pages) ON Semiconductor – Silicon Controlled Rectifiers Reverse Blocking Thyristors | |||
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MCR12LD, MCR12LM,
MCR12LN
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for halfâwave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
halfâwave, silicon gateâcontrolled devices are needed.
Features
⢠Blocking Voltage to 800 Volts
⢠OnâState Current Rating of 12 Amperes RMS at 80°C
⢠High Surge Current Capability â 100 Amperes
⢠Rugged, Economical TOâ220AB Package
⢠Glass Passivated Junctions for Reliability and Uniformity
⢠Minimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
⢠High Immunity to dv/dt â 100 V/msec Minimum at 125°C
⢠PbâFree Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive OffâState Voltage (Note 1) VDRM,
V
(TJ = â40 to 125°C, Sine Wave,
VRRM
50 to 60 Hz, Gate Open)
MCR12LD
400
MCR12LM
600
MCR12LN
800
On-State RMS Current
IT(RMS)
12
A
(180° Conduction Angles; TC = 80°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
100
A
41
A2sec
Forward Peak Gate Power
(Pulse Width ⤠1.0 ms, TC = 80°C)
Forward Average Gate Power
(t = 8.3 ms, TC = 80°C)
PGM
5.0
W
PG(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width ⤠1.0 ms, TC = 80°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
â40 to 125 °C
Storage Temperature Range
Tstg â40 to 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
*For additional information on our PbâFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2005
1
December, 2005 â Rev. 2
http://onsemi.com
SCRs
12 AMPERES RMS
400 thru 800 VOLTS
G
A
K
MARKING
DIAGRAM
1
23
TOâ220AB
CASE 221Aâ09
STYLE 3
AY WW
MCR12LxG
AKA
A
Y
WW
x
G
AKA
= Assembly Location
= Year
= Work Week
= D, M, or N
= PbâFree Package
= Diode Polarity
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Device
Package
Shipping
MCR12LD
MCR12LDG
MCR12LM
MCR12LMG
MCR12LN
TOâ220AB
TOâ220AB
(PbâFree)
TOâ220AB
TOâ220AB
(PbâFree)
TOâ220AB
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
MCR12LNG
TOâ220AB
(PbâFree)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR12L/D
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