MCR12DG Datasheet, PDF (1/4 Pages) ON Semiconductor – Silicon Controlled Rectifiers Reverse Blocking Thyristors

MCR12DG, MCR12MG,
MCR12NG
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half-wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave silicon gate−controlled devices are needed.
Features
• Blocking Voltage to 800 Volts
• On−State Current Rating of 12 Amperes RMS at 80°C
• High Surge Current Capability − 100 Amperes
• Rugged, Economical TO−220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Minimum and Maximum Values of IGT, VGT an IH Specified for
Ease of Design
• High Immunity to dv/dt − 100 V/msec Minimum at 125°C
• These are Pb−Free Devices
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1⁾ V_DRM,
V
(T_J = −40 to 125°C, Sine Wave,
V_RRM
50 to 60 Hz, Gate Open)
MCR12D
400
MCR12M
600
MCR12N
800
On-State RMS Current
(180° Conduction Angles; T_C = 80°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T_J = 125°C)
Circuit Fusing Consideration (t = 8.33 ms)
I_T(RMS)
I_TSM
I²t
12
A
100
A
41
A²sec
Forward Peak Gate Power
(Pulse Width ≤ 1.0 ms, T_C = 80°C)
P_GM
5.0
W
Forward Average Gate Power
(t = 8.3 ms, T_C = 80°C)
P_G(AV)
0.5
W
Average On-State Current
I_T(AV)
7.8
A
(180° Conduction Angles; T_C = 80°C)
Forward Peak Gate Current
(Pulse Width ≤ 1.0 ms, T_C = 90°C)
I_GM
2.0
A
Operating Junction Temperature Range
T_J
−40 to +125 °C
Storage Temperature Range
T_stg −40 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
http://onsemi.com
SCRs
12 AMPERES RMS
400 thru 800 VOLTS
G
A
K
MARKING
DIAGRAM
123
TO−220
CASE 221A−09
STYLE 3
AY WW
MCR12xG
AKA
A
Y
WW
x
G
AKA
= Assembly Location
= Year
= Work Week
= D, M, or N
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Device
MCR12DG
Package
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
MCR12MG
TO−220AB
(Pb−Free)
50 Units / Rail
MCR12NG
TO−220AB
(Pb−Free)
50 Units / Rail
© Semiconductor Components Industries, LLC, 2012
1
November, 2012 − Rev. 5
Publication Order Number:
MCR12/D