MCR12DCM Datasheet, PDF (1/5 Pages) Motorola, Inc – Silicon Controlled Rectifiers

MCR12DCM, MCR12DCN
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed for high volume, low cost, industrial and consumer
applications such as motor control; process control; temperature, light
and speed control.
Features
• Small Size
• Passivated Die for Reliability and Uniformity
• Low Level Triggering and Holding Characteristics
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
• Pb−Free Packages are Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1) V_DRM,
V
(T_J = −40 to 125°C, Sine Wave, 50 to 60 Hz, _VRRM
Gate Open)
MCR12DCM
600
MCR12DCN
800
On−State RMS Current
I_T(RMS)
12
A
(180° Conduction Angles; T_C = 90°C)
Average On−State Current
(180° Conduction Angles; T_C = 90°C)
I_T(AV)
7.8
A
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T_J = 125°C)
Circuit Fusing Consideration (t = 8.3 msec)
I_TSM
I²t
100
A
41
A²sec
Forward Peak Gate Power
(Pulse Width ≤ 1.0 msec, T_C = 90°C)
P_GM
5.0
W
Forward Average Gate Power
(t = 8.3 msec, T_C = 90°C)
P_G(AV)
0.5
W
Forward Peak Gate Current
(Pulse Width ≤ 1.0 msec, T_C = 90°C)
I_GM
2.0
A
Operating Junction Temperature Range
T_J
−40 to 125 °C
Storage Temperature Range
T_stg − 40 to 150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V_DRM for all types can be applied on a continuous basis. Ratings apply for zero
or negative gate voltage; positive gate voltage shall not be applied concurrent
with negative potential on the anode. Blocking voltages shall not be tested
with a constant current source such that the voltage ratings of the device are
exceeded.
© Semiconductor Components Industries, LLC, 2006
1
February, 2006 − Rev. 5
http://onsemi.com
SCRs
12 AMPERES RMS
600 − 800 VOLTS
G
A
K
4
12
3
DPAK
CASE 369C
STYLE 4
MARKING DIAGRAM
YWW
R1
2DCxG
Y
WW
R12DCx
G
= Year
= Work Week
= Device Code
x= M or N
= Pb−Free Package
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR12DCM/D