MCR106 Datasheet, PDF (1/4 Pages) Motorola, Inc – Silicon Controlled Rectifiers

MCR106−6, MCR106−8
Preferred Device
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for high volume consumer applications
such as temperature, light and speed control; process and remote control,
and warning systems where reliability of operation is important.
Features
• Glass-Passivated Surface for Reliability and Uniformity
• Power Rated at Economical Prices
• Practical Level Triggering and Holding Characteristics
• Flat, Rugged, Thermopad Construction for Low Thermal Resistance,
High Heat Dissipation and Durability
• Pb−Free Packages are Available*
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1) V_DRM,
V
(T_J = −40 to 110°C, Sine Wave 50 to 60
V_RRM
Hz, Gate Open) MCR106−6
400
MCR106−8
600
On-State RMS Current, (T_C = 93°C)
I_T(RMS)
4.0
A
(180° Conduction Angles)
Average On−State Current,
I_T(AV)
2.55
A
(180° Conduction Angles; T_C = 93°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T_J = 110°C)
Circuit Fusing Considerations, (t = 8.3 ms)
I_TSM
I²t
25
A
2.6
A²s
Forward Peak Gate Power,
(T_C = 93°C, Pulse Width v 1.0 ms)
P_GM
0.5
W
Forward Average Gate Power,
(T_C = 93°C, t = 8.3 ms)
P_G(AV)
0.1
W
Forward Peak Gate Current,
(T_C = 93°C, Pulse Width v 1.0 ms)
I_GM
0.2
A
Peak Reverse Gate Voltage,
(T_C = 93°C, Pulse Width v 1.0 ms)
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque (Note 2)
V_RGM
6.0
V
T_J
−40 to +110 °C
T_stg −40 to +150 °C
−
6.0
in. lb.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
2. Torque rating applies with use of compression washer (B52200-F006 or
equivalent). Mounting torque in excess of 6 in. lb. does not appreciably lower
case-to-sink thermal resistance. Anode lead and heatsink contact pad are
common. (See AN209B). For soldering purposes (either terminal connection
or device mounting), soldering temperatures shall not exceed +200°C. For
optimum results, an activated flux (oxide removing) is recommended.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCRs
4 AMPERES RMS
400 thru 600 VOLTS
G
A
K
32 ₁
TO−225AA
CASE 77
STYLE 2
MARKING DIAGRAM
YWW
CR
106−xG
Y
= Year
WW
= Work Week
CR106−x = Device Code
x = 6 or 8
G
= Pb−Free Package
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
1
November, 2005 − Rev. 4
Publication Order Number:
MCR106/D