MCR08BT1_06 Datasheet, PDF (1/6 Pages) ON Semiconductor – Sensitive Gate Silicon Controlled Rectifiers

MCR08B, MCR08M
Preferred Device
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
PNPN devices designed for line powered consumer applications
such as relay and lamp drivers, small motor controls, gate drivers for
larger thyristors, and sensing and detection circuits. Supplied in
surface mount package for use in automated manufacturing.
Features
• Sensitive Gate Trigger Current
• Blocking Voltage to 600 V
• Glass Passivated Surface for Reliability and Uniformity
• Surface Mount Package
• Pb−Free Packages are Available
MAXIMUM RATINGS (T_J = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1) V_DRM,
V
(Sine Wave, R_GK = 1000 W
V_RRM
T_J = 25 to 110°C)
MCR08BT1
200
MCR08MT1
600
On-State Current RMS
(All Conduction Angles; T_C = 80°C)
I_T(RMS)
0.8
A
Peak Non-repetitive Surge Current
I_TSM
8.0
A
(1/2 Cycle Sine Wave, 60 Hz, T_C = 25°C)
Circuit Fusing Considerations (t = 8.3 ms)
I²t
0.4
A²s
Forward Peak Gate Power
(T_C = 80°C, t = 1.0 ms)
Average Gate Power
(T_C = 80°C, t = 8.3 ms)
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
P_GM
0.1
W
P_G(AV)
0.01
W
T_J
−40 to +110 °C
T_stg −40 to +150 °C
Rating
Symbol Value Unit
Thermal Resistance, Junction−to−Ambient
PCB Mounted per Figure 1
R_qJA
156
°C/W
Thermal Resistance, Junction−to−Tab
R_qJT
Measured on Anode Tab Adjacent to Epoxy
25
°C/W
Maximum Device Temperature for Solder-
T_L
ing Purposes (for 10 Seconds Maximum)
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V_DRM and V_RRM for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant source such that the voltage
ratings of the devices are exceeded.
© Semiconductor Components Industries, LLC, 2006
1
April, 2006 − Rev. 5
http://onsemi.com
SCRs
0.8 AMPERES RMS
200 thru 600 VOLTS
G
A
K
MARKING
DIAGRAM
SOT−223
AYW
1
CASE 318E
CR08x G
STYLE 10
G
1
CR08x = Device Code
x = B or M
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
1
Cathode
2
Anode
3
Gate
4
Anode
ORDERING INFORMATION
Device
Package
Shipping^†
MCR08BT1
SOT−223 1000/Tape &Reel
MCR08BT1G SOT−223 1000/Tape &Reel
(Pb−Free)
MCR08MT1 SOT−223 1000/Tape & Reel
MCR08MT1G SOT−223 1000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MCR08BT1/D