MCH6663 Datasheet, PDF (1/7 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

MCH6663
Power MOSFET
30V, 188mΩ, 1.8A, −30V, 325mΩ, −1.5A,
Complementary Dual
www.onsemi.com
Features
• ON-Resistance Nch : RDS(on)1=145mΩ (typ)
Pch : RDS(on)1=250mΩ (typ)
• 4V Drive
• Complementary N-Channel and P-Channel MOSFET
• Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol N-channel P-channel
Unit
Drain to Source Voltage
Gate to Source Voltage
VDSS
VGSS
30
−30
V
±20
±20
V
Drain Current (DC)
ID
1.8
−1.5
A
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
IDP
7.2
−6
A
Power Dissipation
When mounted on ceramic substrate PD
(900mm²Ã—0.8mm) 1unit
Junction Temperature
Tj
0.8
W
150
°C
Storage Temperature
Tstg
−55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm²Ã—0.8mm) 1unit
Symbol
R_θJA
Value
Unit
156.25
°C/W
VDSS
N-Ch
30V
P-Ch
−30V
RDS(on) Max
188 mΩ@ 10V
343 mΩ@ 4.5V
378 mΩ@ 4V
325 mΩ@ −10V
555 mΩ@ −4.5V
641 mΩ@ −4V
ID _Max
1.8A
−1.5A
Electrical Connection
N-Channel and P-Channel
6
5
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
1
2
3
Packing Type : TL Marking
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
March 2015 - Rev. 3
Publication Order Number :
MCH6663/D