MCH6662 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – N-Channel Silicon MOSFET General-Purpose Switching Device Applications

MCH6662
Power MOSFET
20V, 160mΩ, 2A, Dual N-Channel
www.onsemi.com
Features
• _{ON-Resistance Nch : RDS(on)1=120mW (typ)}
• _{1.8V Drive}
• _{ESD Diode - Protected Gate}
• _{Pb-Free, Halogen Free and RoHS Compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
VDSS
VGSS
ID
IDP
PD
Tj
Storage Temperature
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
Value
Unit
20
V
±10
V
2.0
A
8.0
A
0.8
W
150
°C
--55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
Symbol
R_θJA
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Value
156.25
Unit
°C/W
Packing Type : TL
Marking
XP
TL
Electrical Connection
6
5
4
1
2
3
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
©Semiconductor Components Industries, LLC, 2015
1
January 2015 - Rev. 1
Publication Order Number:
MCH6662/D