MCH6661 Datasheet, PDF (1/5 Pages) ON Semiconductor – N-Channel Power MOSFET

Ordering number : ENA2280A
MCH6661
N-Channel Power MOSFET
30V, 1.8A, 188mΩ, Dual MCPH6
http://onsemi.com
Features
• _{ON-resistance Nch : RDS(on)1=145mW (typ.)}
• _{4V drive}
• _{Halogen free compliance}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature Purposes,
Symbol
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
Lead Temperature for Soldering Purposes,
3mm from Case for 10 Seconds
TL
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Thermal Resistance Ratings
Parameter
Junction to Ambient
Symbol
R_θJA
Value
156.3
Unit
°C/W
Value
Unit
30
V
±20
V
1.8
A
7.2
A
0.8
W
150
°C
--55 to +150
°C
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Forward Diode Voltage
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=0.9A
ID=0.9A, VGS=10V
ID=0.5A, VGS=4.5V
ID=0.5A, VGS=4V
VDS=10V, f=1MHz
See specified Test Circuit.
VDS=15V, VGS=10V, ID=1.8A
IS=1.8A, VGS=0V
Value
Unit
min
typ
max
30
V
1
mA
±10
mA
1.2
2.6
V
1.1
S
145
188 mW
245
343 mW
270
378 mW
88
pF
19
pF
11
pF
3.4
ns
3.6
ns
10.5
ns
4.0
ns
2.0
nC
0.33
nC
0.29
nC
0.86
1.2
V
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2014
January, 2014
12114HK TC-00003088/11014HK PE No. A2280-1/5