MCH6660 Datasheet, PDF (1/8 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

MCH6660
Power MOSFET
20V, 136mΩ, 2A, ^–20V, 266mΩ, ^–1.5A Complementary Dual
www.onsemi.com
Features
• _{ON-resistance Nch : RDS(on)1=105mW(typ.)}

Pch : RDS(on)1=205mW(typ.)
• _{Pb-Free, Halogen Free and RoHS Compliance}
• _{Ultrasmall Package MCPH6(2.0mm×2.1mm×0.85mmt)}
• _{Nch MOSFET and Pch MOSFET are put in MCPH6 Package}
• _{1.8V Drive}
• _{ESD Diode - Protected Gate}
Applications
• _{General-Purpose Switching Device Applications}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Conditions
N-channel P-channel
Unit
VDSS
VGSS
ID
IDP
PD
Tj
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
20
±10
2
8
0.8
150
--20
V
±10
V
--1.5
A
--6
A
W
°C
Tstg
--55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7022A-006
2.0
0.15
654
MCH6660-TL-H
MCH6660-TL-W
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
0 to 0.02
1 23
TL
0.65
0.3
123
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Electrical Connection
6
5
4
654
MCPH6
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of this data sheet.
1
2
3
XM
©Semiconductor Components Industries, LLC, 2014
1
December 2014 - Rev. 2
Publication Order Nunber:
MCH6660/D