MCH6626 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

MCH6626
Ordering number : ENN7918
MCH6626
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
Features
• _{The MCH6626 incorporates an N-channel MOSFET}
and a P-channel MOSFET that feature low ON-
resistance and high-speed switching, thereby enabling
high-density mounting.
• _{Excellent ON-resistance characteristic.}
• _{2.5V drive.}
Package Dimensions
unit : mm
2173A
[MCH6626]
0.3
0.15
456
Specifications
Absolute Maximum Ratings at Ta=25°C
3 21
0.65
2.0
(Bottom view)
6 54
1 23
(Top view)
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Conditions
N-channel
P-channel
Unit
VDSS
20
--20
V
VGSS
±10
±10
V
ID
1.6
--1.0
A
IDP
PW≤10µs, duty cycle≤1%
PD
Mounted on a ceramic board (900mm²âœ•0.8mm)1unit
6.4
0.8
--4.0
A
W
Tch
150
°C
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Marking : WA
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
RDS(on)3
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=0.8A
ID=0.8A, VGS=4V
ID=0.4A, VGS=2.5V
ID=0.1A, VGS=1.8V
Ratings
Unit
min
typ
max
20
V
1
µA
±10 µA
0.4
1.3
V
1.4
2.4
S
180
230 mΩ
220
310 mΩ
300
450 mΩ
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn6seImwiw.cwo.omnsemi.com
Publication Order Number:
MCH6626/D