MCH6613-TL-E Datasheet, PDF (1/8 Pages) ON Semiconductor – Power MOSFET

Ordering number : EN6920C
MCH6613
Power MOSFET
30V, 0.35A, 3.7Ω ^{–30V, –0.2A,} 10.4Ω, Complementary Dual MCPH6
http://onsemi.com
Features
• _{The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low}
ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting
• _{Excellent ON-resistance characteristic}
• _{1.5V drive}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
N-channel P-channel
Unit
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
30
±10
0.35
1.4
0.8
150
--30
V
±10
V
--0.2
A
--0.8
A
W
°C
Storage Temperature
Tstg
--55 to +150
°C
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7022A-006
2.0
654
0.15
MCH6613-TL-E
0 to 0.02
1 23
0.65
0.3
123
654
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
MCPH6
Ordering & Package Information
Device
Package
Shipping
MCH6613-TL-E
MCPH6
SC-88, SC-70-6, SOT-363
3,000
pcs./reel
memo
Pb-Free
Packing Type : TL
Marking
FM
TL
Electrical Connection
6
5
4
1
2
3
Semiconductor Components Industries, LLC, 2013
July, 2013
71013 TKIM TC-00002962/71112 TKIM/52506PE MSIM TB-00002278/52101 TSIM TA-324 No.6920-1/8