MCH6601 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

Ordering number : EN6458D
MCH6601
P-Channel Power MOSFET
–30V, –0.2A, _{10.4Ω, Dual MCPH6}
http://onsemi.com
Features
• _{Low ON-resistance}
• _{Ultrahigh-speed switching}
• _{1.5V drive}
• _{Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm²Ã—0.8mm) 1unit
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Ratings
Unit
--30
V
±10
V
--0.2
A
--0.8
A
0.8
W
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7022A-006
2.0
654
0.15
MCH6601-TL-E
0 to 0.02
1 23
0.65
0.3
123
654
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
MCPH6
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
FA
TL
Electrical Connection
6
5
4
1
2
3
Semiconductor Components Industries, LLC, 2013
August, 2013
82813 TKIM TC-00002985/70412 TKIM/42806 MSIM TB-00002289/ No.6458-1/6
O3105PE MSIM TB-00001865/N2499 TSIM TA-2457