MCH6436 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – General-Purpose Switching Device Applications

MCH6436
Power MOSFET
30V, 34mΩ, 6A, Single N-Channel
www.onsemi.com
Features
• Low On-Resistance
• 1.8V Drive
• High Speed Switching
• ESD Diode-Protected Gate
• Pb-Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
VDSS
VGSS
ID
Drain Current (Pulse)
PW≤10μs, duty cycle≤1%
IDP
Power Dissipation
When mounted on ceramic substrate
PD
(1500mm² × 0.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
Thermal Resistance Ratings
Parameter
Junction to Ambient
When mounted on ceramic substrate
(1500mm² × 0.8mm)
Symbol
R_θJA
Value
Unit
30
V
±12
V
6
A
24
A
1.5
W
150
°C
−55 to +150
°C
Value
Unit
83.3
°C/W
VDSS
30V
RDS(on) Max
34mΩ@ 4.5V
49mΩ@ 2.5V
69mΩ@ 1.8V
ID _Max
6A
Electrical Connection
N-Channel
1, 2, 5, 6
1 : Drain
3
2 : Drain
3 : Gate
4 : Source
5 : Drain
4
6 : Drain
Packing Type : TL Marking
ZK
TL
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
1
March 2015 - Rev. 3
Publication Order Number :
MCH6436/D