MCH6424 Datasheet, PDF (1/4 Pages) ON Semiconductor – General-Purpose Switching Device Applications

MCH6424
Ordering number : ENA0351
MCH6424
Features
• Low ON-resistance.
• 4V drive.
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm²âœ•0.8mm)
Ratings
Unit
60
V
±10
V
3
A
12
A
1.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : KY
V(BR)DSS
IDSS
IGSS
VGS(off)
^yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=4V
ID=1A, VGS=2.5V
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
60
0.4
3.7
Ratings
Unit
typ
max
V
1
µA
±10
µA
1.3
V
6.3
S
85
115 mΩ
92
135 mΩ
690
pF
65
pF
44
pF
13
ns
26.5
ns
92
ns
64
ns
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
MCH6424/D