MCH6341 Datasheet, PDF (1/5 Pages) Sanyo Semicon Device – P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Ordering number : ENA1272B
MCH6341
Power MOSFET
–30V, _59mΩ, –5A, _{Single P-Channel}
http://onsemi.com
Features
• _{Low RDS(on)}
• _{Pb-free and RoHS Compliance}
• _{4V drive}
• _{ESD diode-Protected gate}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tj
Tstg
Conditions
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm²Ã—0.8mm)
Ratings
Unit
--30
V
±20
V
--5
A
--20
A
1.5
W
150
°C
--55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7022A-009
2.0
654
0.15
MCH6341-TL-E
MCH6341-TL-H
MCH6341-TL-W
0 to 0.02
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
YQ
1 23
0.65
0.3
123
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
TL
Electrical Connection
1, 2, 5, 6
3
654
MCPH6
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014
72814HK TC-00002819/62012TKIM/73008TIIM PE No. A1272-1/5