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MCH6123 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications
Ordering number : ENA1291A
MCH6123
Bipolar Transistor
–50V, –3A, Low VCE(sat), PNP Single MCPH6
http://onsemi.com
Applications
• DC-DC converter, relay drivers, lamp drivers, motor drivers
Features
• Adoption of MBIT process
• Large current capacity
• Low collector-to-emitter saturation voltage
• High speed switching
• Ultrasmall-sized package permitting applied sets to be made small and slim (0.85mm)
• High allowable power dissipation
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Conditions
When mounted on ceramic substrate (600mm2×0.8mm)
Ratings
Unit
-50
V
-50
V
-50
V
-6
V
-3
A
-6
A
-600 mA
1
W
150
°C
-55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7022A-007
2.0
0.15
654
MCH6123-TL-E
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
1 23
0.65
0.3
0 to 0.02
AZ
TL
123
654
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
MCPH6
Electrical Connection
1, 2, 5, 6
3
4
Semiconductor Components Industries, LLC, 2013
September, 2013
N2112 TKIM TC-00002853/O0808EA TIIM TC-00001609 No.A1291-1/6