MCH6001 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifi er

Ordering number : ENA1601A
MCH6001
RF Transistor
8V, 150mA, fT=16GHz NPN Dual MCPH6
http://onsemi.com
Features
• _{Low-noise use : NF=1.2dB typ (f=1GHz)}
• _{High cut-off frequency : fT=16GHz typ (VCE=5V)}
• _{High gain : |S21e|}²_{=16dB typ (f=1GHz)}
• _{Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting}
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
PT
Tj
Tstg
Conditions
When mounted on glass epoxy substrate 1unit
When mounted on glass epoxy substrate
Ratings
Unit
15
V
8
V
2
V
150 mA
400 mW
600 mW
150
°C
--55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7022A-019
2.0
654
0.15
MCH6001-TL-E
0 to 0.02
1 23
0.65
0.3
123
654
1 : Base1
2 : Emitter1
3 : Collector2
4 : Base2
5 : Emitter2
6 : Collector1
MCPH6
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
GT
TL
Electrical Connection
C1 E2 B2
B1 E1 C2
Semiconductor Components Industries, LLC, 2013
August, 2013
92612 TKIM/N1809AB TKIM TC-00002075 No. A1601-1/6