MCH5541 Datasheet, PDF (1/6 Pages) Sanyo Semicon Device – MCH5541

MCH5541
PNP/NPN Bipolar Transistor
()30V, ()700mA,
VCE(sat) ; (220)190mV (max)
Overview
MCH5541 is ()30V, ()700mA, VCE(sat) ; (220)190mV (max),
PNP/NPN 2 in 1 type MCPH5, Bipolar Transistor.
Features
 Composite type with a PNP / NPN transistor contained in one package,
facilitating high-density mounting
 Ultrasmall package permitting applied sets to be small and slim.
Package : SC-88AFL / MCPH5 (2.0  1.6  0.85 mm)
Typical Applications
 MOSFET gate drivers
 Relay drivers
 Lamp drivers
 Motor drivers
www.onsemi.com
Electrical Connection
5
4
123
1 : Base1
2 : Emitter Common
3 : Base2
4 : Collector2
5 : Collector1
Top view
ORDERING INFORMATION
See detailed ordering and shipping
information on page 6 of this data sheet.
SPECIFICATIONS ( ) : PNP
ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1)
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
VCBO
VCEO
VEBO
IC
ICP
PC
PW 10s
Mounted on a ceramic board (600mm² x 0.8m)
(30) 40
V
(30) 30
V
() 5
V
() 700
mA
() 3
A
0.5
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
55 to +150
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded,
device functionality should not be assumed, damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS at Ta = 25C (Note 2)
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Continued on next page.
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCB=()30V, IE=0
VEB=()4V, IC=0
VCE=()2V, IC=(10)50mA
VCE=()2V, IC=()50mA
VCB=()10V, f=1MHz
IC=()200mA, IB=()10mA
IC=()200mA, IB=()10mA
IC=()10A, IE=0
IC=()1mA, RBE=
IE=()10A, IC=0
min
(200) 300
(30) 40
() 30
() 5
Ratings
typ
(520) 540
(4.7) 3.3
(110) 85
() 0.9
max
() 100
() 100
(500) 800
(220) 190
() 1.2
Unit
nA
nA
MHz
pF
mV
V
V
V
V
© Semiconductor Components Industries, LLC, 2014
1
August 2014 - Rev. 0
Publication Order Number :
MCH5541/D